No. |
Part Name |
Description |
Manufacturer |
31 |
KDA0471PL-80 |
80MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
32 |
KDA0476PL-80 |
80MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
33 |
KDA0478PL-80 |
80MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
34 |
LC338128PL-80 |
1 MEG (131072 words x 8 bit) pseudo-SRAM |
SANYO |
35 |
LC33832PL-80 |
256K (32768word x 8bit) Pseudo-SRAM |
SANYO |
36 |
TC514100APL-80 |
4,194,304 WORD x BIT DYNAMIC RAM |
TOSHIBA |
37 |
TC514400APL-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
38 |
TC51832PL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
39 |
TC51832SPL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
40 |
TC551001BPL-85L |
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM |
TOSHIBA |
41 |
TC55257APL-85 |
TOSHIBA MOS MEMORY PRODUCTS |
TOSHIBA |
42 |
TC55257BPL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
43 |
TC55257BSPL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
44 |
TC55257CPL-85 |
SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM |
TOSHIBA |
45 |
TC55257CSPL-85 |
SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM |
TOSHIBA |
46 |
TC55257DPL-85L |
32,768 WORD-8 BIT STATIC RAM |
TOSHIBA |
47 |
TC55257DPL-85V |
MOS DIGITAL INTEGRATED CIRCUIT |
TOSHIBA |
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