| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BUY18 |
Silicon Planar NPN, high voltage power transistor |
SGS-ATES |
| 32 |
BUY38 |
Silicon HOMETAXIAL NPN, medium power switch |
SGS-ATES |
| 33 |
BUY68 |
Silicon PLANAR NPN, high current, general purpose transistor |
SGS-ATES |
| 34 |
HFA3096 |
Transistors, Array, 3 NPN, 2 PNP, Ultra High Frequency |
Intersil |
| 35 |
HFA3127 |
Transistor Array, 5 NPN, Ultra High Frequency |
Intersil |
| 36 |
HFA3134 |
Transistors, Matched Pair, 2 NPN, Ultra High Frequency |
Intersil |
| 37 |
MIL-PRF-19500 |
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
SGS Thomson Microelectronics |
| 38 |
MJE13005 |
NPN, silicon plastic power transistor. For 115 and 220V switch-mode applications such as switching regulators, inverters motor controls, solenoid/relay drivers and deflection circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Veb = 9Vdc, Ic = 4A |
USHA India LTD |
| 39 |
MJE13007 |
NPN, silicon plastic power transistor. Suited for 115 and 220V switch-mode applications such as switching regulators, inverters, motor controls, solenoid/relay. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Veb = 9Vdc, Ic = 8Adc, Pd = 80W. |
USHA India LTD |
| 40 |
MJE3055T |
NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
USHA India LTD |
| 41 |
NJW44H11 |
80 V NPN, 10 A Power Bipolar Transistor |
ON Semiconductor |
| 42 |
NSS12201L |
Low VCE(sat) Transistor, NPN, 12 V, 4.0 A |
ON Semiconductor |
| 43 |
NSS12501UW3 |
Low VCE(sat) Transistor, NPN, 12 V, 7.0 A |
ON Semiconductor |
| 44 |
NSS12601CF8 |
Low VCE(sat) Transistor, NPN, 12 V, 8.0 A |
ON Semiconductor |
| 45 |
NSS1C200MZ4 |
Low VCE(sat) Transistor, NPN, 100 V, 2.0 A |
ON Semiconductor |
| 46 |
NSS20201L |
Low VCE(sat) Transistor, NPN, 20 V, 4.0 A, SOT-23 Package |
ON Semiconductor |
| 47 |
NSS20501UW3 |
Low VCE(sat) Transistor, NPN, 20 V, 7.0 A, WDFN3 Package |
ON Semiconductor |
| 48 |
NSS20601CF8 |
Low VCE(sat) Transistor, NPN, 20 V, 8.0 A, ChipFET Package |
ON Semiconductor |
| 49 |
NSS30201MR6T1G |
Low VCE(sat) Transistor, NPN, 30 V, 2.0 A, SOT-23 Package |
ON Semiconductor |
| 50 |
NSS40201L |
Low VCE(sat) Transistor, NPN, 40 V, 2.0 A |
ON Semiconductor |
| 51 |
NSS40301MD |
Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A |
ON Semiconductor |
| 52 |
NSS40601CF8 |
Low VCE(sat) Transistor, NPN, 40 V, 8.0 A |
ON Semiconductor |
| 53 |
NSS60201L |
Low VCE(sat) Transistor, NPN, 60 V, 4.0 A |
ON Semiconductor |
| 54 |
NSS60601MZ4 |
Low VCE(sat) Transistor, NPN, 60 V, 6.0 A |
ON Semiconductor |
| 55 |
NTE3122 |
Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington |
NTE Electronics |
| 56 |
NTE3123 |
Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington |
NTE Electronics |
| 57 |
PE7058 |
NPN, silicon, planar transistor |
Mikroelektronikai Vallalat |
| 58 |
PE7059 |
NPN, silicon, planar transistor |
Mikroelektronikai Vallalat |
| 59 |
TIP121 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 60 |
TIP122 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
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