No. |
Part Name |
Description |
Manufacturer |
31 |
ARA210A12 |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 12 V DC. 1 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
32 |
ARA210A1H |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 1.5 V DC. 1 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
33 |
ARA210A24 |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 24 V DC. 1 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
34 |
ARA210A4H |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 4.5 V DC. 1 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
35 |
ARA220A03 |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 3 V DC. 2 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
36 |
ARA220A05 |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 5 V DC. 2 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
37 |
ARA220A06 |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 6 V DC. 2 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
38 |
ARA220A09 |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 9 V DC. 2 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
39 |
ARA220A12 |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 12 V DC. 2 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
40 |
ARA220A1H |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 1.5 V DC. 2 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
41 |
ARA220A24 |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 24 V DC. 2 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
42 |
ARA220A4H |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 4.5 V DC. 2 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
43 |
AT84AS003 |
10-bit 1.5 Gsps ADC with 1:4 Demultiplexed output. The AT84AS003 is the first ADC on the market breaking the 8.0 ENOB barrier at ... |
Atmel |
44 |
AT94S05AL |
The Secure FPSLIC combines our AT94K05AL FPSLIC device and a secure configuration EEPROM in a single 256-pin CABGA package. |
Atmel |
45 |
AT94S10AL |
The Secure FPSLIC combines our AT94K10AL FPSLIC device and a secure configuration EEPROM in a single (256 BGA and 144LQ) package. |
Atmel |
46 |
AT94S40AL |
The Secure FPSLIC combines our AT94K40AL FPSLIC device and a secure configuration EEPROM in a single (256 BGA and 144 LQ) package. |
Atmel |
47 |
ATAM862-3 |
Microcontroller with UHF ASK/FSK Transmitter at 315 MHz, 4 KB Flash, 3 Timer, SSI, 11 I/O Lines, 64 Byte EEPROM, VDD = ... |
Atmel |
48 |
ATAM862-4 |
Microcontroller with UHF ASK/FSK Transmitter at 434 MHz, 4 KB Flash, 3 Timer, SSI, 11 I/O Lines, 64 Byte EEPROM, VDD = ... |
Atmel |
49 |
ATAM862-8 |
Microcontroller with UHF ASK/FSK Transmitter at 868 MHz and 915 MHz, 4 KB Flash, 3 Timer, SSI, 11 I/O Lines, 64 Byte EEPROM, VDD ... |
Atmel |
50 |
ATFS05 |
Configuration memory used to load the bitstream for AT94K05AL FPSLIC devices. |
Atmel |
51 |
ATFS10 |
Configuration memory used to load the bitstream for AT94K10AL FPSLIC devices. |
Atmel |
52 |
ATFS40 |
Configuration memory used to load the bitstream for AT94K40AL FPSLIC devices. |
Atmel |
53 |
BFP180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
54 |
BFP180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
55 |
BFP520 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
56 |
BFR180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
57 |
BFR180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
58 |
BFS481 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) |
Siemens |
59 |
BFS483 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) |
Siemens |
60 |
BW2-2Z10A |
THYRISTOR ATCKS |
TOSHIBA |
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