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Datasheets for R AT

Datasheets found :: 265
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No. Part Name Description Manufacturer
31 ARA210A12 RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 12 V DC. 1 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
32 ARA210A1H RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 1.5 V DC. 1 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
33 ARA210A24 RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 24 V DC. 1 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
34 ARA210A4H RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 4.5 V DC. 1 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
35 ARA220A03 RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 3 V DC. 2 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
36 ARA220A05 RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 5 V DC. 2 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
37 ARA220A06 RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 6 V DC. 2 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
38 ARA220A09 RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 9 V DC. 2 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
39 ARA220A12 RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 12 V DC. 2 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
40 ARA220A1H RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 1.5 V DC. 2 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
41 ARA220A24 RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 24 V DC. 2 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
42 ARA220A4H RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 4.5 V DC. 2 coil latching type. Surface-mount terminal. Matsushita Electric Works(Nais)
43 AT84AS003 10-bit 1.5 Gsps ADC with 1:4 Demultiplexed output. The AT84AS003 is the first ADC on the market breaking the 8.0 ENOB barrier at ... Atmel
44 AT94S05AL The Secure FPSLIC combines our AT94K05AL FPSLIC device and a secure configuration EEPROM in a single 256-pin CABGA package. Atmel
45 AT94S10AL The Secure FPSLIC combines our AT94K10AL FPSLIC device and a secure configuration EEPROM in a single (256 BGA and 144LQ) package. Atmel
46 AT94S40AL The Secure FPSLIC combines our AT94K40AL FPSLIC device and a secure configuration EEPROM in a single (256 BGA and 144 LQ) package. Atmel
47 ATAM862-3 Microcontroller with UHF ASK/FSK Transmitter at 315 MHz, 4 KB Flash, 3 Timer, SSI, 11 I/O Lines, 64 Byte EEPROM, VDD = ... Atmel
48 ATAM862-4 Microcontroller with UHF ASK/FSK Transmitter at 434 MHz, 4 KB Flash, 3 Timer, SSI, 11 I/O Lines, 64 Byte EEPROM, VDD = ... Atmel
49 ATAM862-8 Microcontroller with UHF ASK/FSK Transmitter at 868 MHz and 915 MHz, 4 KB Flash, 3 Timer, SSI, 11 I/O Lines, 64 Byte EEPROM, VDD ... Atmel
50 ATFS05 Configuration memory used to load the bitstream for AT94K05AL FPSLIC devices. Atmel
51 ATFS10 Configuration memory used to load the bitstream for AT94K10AL FPSLIC devices. Atmel
52 ATFS40 Configuration memory used to load the bitstream for AT94K40AL FPSLIC devices. Atmel
53 BFP180 NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) Siemens
54 BFP180W NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) Siemens
55 BFP520 NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) Siemens
56 BFR180 NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) Siemens
57 BFR180W NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) Siemens
58 BFS481 NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) Siemens
59 BFS483 NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) Siemens
60 BW2-2Z10A THYRISTOR ATCKS TOSHIBA


Datasheets found :: 265
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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