| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N2907 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 32 |
2N2907A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 33 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 34 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
| 35 |
2N4427 |
Silicon NPN epitaxial planar transistor for input stages and driver stages in VHF amplifier circuits |
AEG-TELEFUNKEN |
| 36 |
2N5447 |
Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 37 |
2N5448 |
Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 38 |
2N5449 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 39 |
2N5450 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 40 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 41 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 42 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 43 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 44 |
2N915 |
Silicon NPN planar RF transistor for non-saturating switching circuits, RF amplifiers and oscillator circuits |
AEG-TELEFUNKEN |
| 45 |
2SA1349 |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL |
TOSHIBA |
| 46 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 47 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 48 |
2SK246 |
Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
| 49 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
| 50 |
2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
| 51 |
3SK38A |
Silicon N-Channel MOS field effect transistor, chopper circuit applications |
TOSHIBA |
| 52 |
4069UB |
Inverter Circuits |
Fairchild Semiconductor |
| 53 |
4069UB |
Inverter Circuits |
National Semiconductor |
| 54 |
53OM |
Integrated A.M.-Radio receiver circuit |
Philips |
| 55 |
709 |
Linear circuit operational amplifier |
Amelco Semiconductor |
| 56 |
709A |
Linear circuit operational amplifier |
Amelco Semiconductor |
| 57 |
709AE |
Linear circuit operational amplifier |
Amelco Semiconductor |
| 58 |
709B |
Linear circuit operational amplifier |
Amelco Semiconductor |
| 59 |
710 |
Linear Circuit Differential Comparator |
Amelco Semiconductor |
| 60 |
710B |
Linear Circuit Differential Comparator |
Amelco Semiconductor |
| | | |
