No. |
Part Name |
Description |
Manufacturer |
31 |
Q62702-F1240 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
32 |
Q62702-F1287 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
33 |
Q62702-F944 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
34 |
SD1426 |
24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz |
SGS Thomson Microelectronics |
35 |
TAN250A |
250 W, 50 V, high power common base bipolar transistor |
Acrian |
36 |
TAN250A-2 |
250 W, 50 V, high power common base bipolar transistor |
Acrian |
37 |
TAN250A-3 |
250 W, 50 V, high power common base bipolar transistor |
Acrian |
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