No. |
Part Name |
Description |
Manufacturer |
31 |
1N5312 |
CURRENT LIMITER FIELD EFFECT DIODES |
Knox Semiconductor Inc |
32 |
1N5313 |
CURRENT LIMITER FIELD EFFECT DIODES |
Knox Semiconductor Inc |
33 |
1N5314 |
CURRENT LIMITER FIELD EFFECT DIODES |
Knox Semiconductor Inc |
34 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
35 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
36 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
37 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
38 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
39 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
40 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
41 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
42 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
43 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
44 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
45 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
46 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
47 |
2SC1306 |
Silicon NPN Transistor Final RF Power Output |
Unknow |
48 |
430P |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
49 |
430P103X5600 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
50 |
430P103X9600 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
51 |
430P104X5100 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
52 |
430P104X5200 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
53 |
430P104X5400 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
54 |
430P104X5600 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
55 |
430P104X9100 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
56 |
430P104X9200 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
57 |
430P104X9400 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
58 |
430P104X9600 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
59 |
430P105X5050 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
60 |
430P105X5100 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
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