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Datasheets for R FOR

Datasheets found :: 20447
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No. Part Name Description Manufacturer
31 1N5211 Diffused-Junction Silicon Rectifier for industrial and consumer-product RCA Solid State
32 1N5212 Diffused-Junction Silicon Rectifier for industrial and consumer-product RCA Solid State
33 1N5213 Diffused-Junction Silicon Rectifier for industrial and consumer-product RCA Solid State
34 1N5214 Diffused-Junction Silicon Rectifier for industrial and consumer-product RCA Solid State
35 1N5215 Diffused-Junction Silicon Rectifier for industrial and consumer-product RCA Solid State
36 1N5216 Diffused-Junction Silicon Rectifier for industrial and consumer-product RCA Solid State
37 1N5217 Diffused-Junction Silicon Rectifier for industrial and consumer-product RCA Solid State
38 1N5218 Diffused-Junction Silicon Rectifier for industrial and consumer-product RCA Solid State
39 1S1837 Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) TOSHIBA
40 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
41 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
42 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
43 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
44 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
45 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
46 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
47 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
48 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
49 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
50 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
51 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
52 2-AA113 HF germanium diode pair for high-resistance radio detector and discriminator circuits TUNGSRAM
53 2-AA116 HF germanium diode pair for low resistance radio detector and discriminator circuits TUNGSRAM
54 2-AA118 HF Germanium tip diode pair for phase discriminator circuits TUNGSRAM
55 2-AA119 HF germanium tip diode pair for high-resistance ratio detector and discriminator circuits TUNGSRAM
56 2561 CT2561 Bus Controller, Remote Terminal and BUS Monitor FOR MIL-STD-1553B Aeroflex Circuit Technology
57 2N1008 PNP germanium transistor for audio driver and medium speed switching applications Motorola
58 2N1008A PNP germanium transistor for audio driver and medium speed switching applications Motorola
59 2N1008B PNP germanium transistor for audio driver and medium speed switching applications Motorola
60 2N1021 PNP germanium power transistor for industrial applications Motorola


Datasheets found :: 20447
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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