No. |
Part Name |
Description |
Manufacturer |
31 |
2023-6132-20 |
4-8 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
32 |
2023-6133-06 |
8-12.4 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
33 |
2023-6134-10 |
8-12.4 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
34 |
2023-6135-20 |
8-12.4 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
35 |
2023-6136-06 |
12.4-18 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
36 |
2023-6137-10 |
12.4-18 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
37 |
2023-6138-20 |
12.4-18 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
38 |
24LLC02 |
2K-Bit Serial EEPROM for Low Power |
Ceramate |
39 |
24LLC02A |
2K-bit Serial EEPROM for Low Power |
Ceramate |
40 |
24LLC02T |
2K-bit Serial EEPROM for Low Power |
Ceramate |
41 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
42 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
43 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
44 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
45 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
46 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
47 |
2N2330 |
NPN silicon annular Star transistor for low-level DC/AC chopper applications |
Motorola |
48 |
2N2331 |
NPN silicon annular Star transistor for low-level DC/AC chopper applications |
Motorola |
49 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
50 |
2N2483 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
51 |
2N2484 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
52 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
53 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
54 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
55 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
56 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
57 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
58 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
59 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
60 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
| | | |