No. |
Part Name |
Description |
Manufacturer |
31 |
IRLR2905 |
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
32 |
IRLR2905PBF |
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
33 |
IRLR2905TR |
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
34 |
IRLR2905TRL |
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
35 |
IRLR2905TRLPBF |
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
36 |
IRLR2905TRPBF |
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
37 |
IRLR2905TRR |
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
38 |
IRLR2905Z |
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
39 |
IRLR2905ZTRLPBF |
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
40 |
IRLR2908 |
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
41 |
IRLR2908TR |
Leaded 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
42 |
IRLR2908TRPBF |
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
43 |
MR2900 |
Provision for Standby mode operation Partial Resonance Power Supply IC Module |
Shindengen |
44 |
MR2920 |
(MR2900 Series) Input Voltage Autosensing / Partial Resonance Power Supply IC Module |
Shindengen |
45 |
PB-IRFR2905Z |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
46 |
PB-IRLR2905 |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
47 |
PB-IRLR2905Z |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
48 |
PB-IRLR2908 |
Leaded 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
49 |
PBYR290CT |
Schottky barrier double diode. Repetitive peak reverse voltage 90 V. |
Philips |
50 |
PMR290UNE |
20 V, 700 mA N-channel Trench MOSFET |
Nexperia |
51 |
PMR290UNE |
20 V, 700 mA N-channel Trench MOSFET |
NXP Semiconductors |
52 |
PMR290XN |
N-channel TrenchMOS extremely low level FET |
Nexperia |
53 |
PMR290XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
54 |
PMR290XN |
N-channel uTrenchmos (tm) extremely low level FET |
Philips |
55 |
PMR290XN |
PMR290XN; N-channel uTrenchmos (tm) extremely low level FET |
Philips |
56 |
PMR290XN |
PMR290XN; N-channel uTrenchmos (tm) extremely low level FET |
Philips |
57 |
TR2906SZ |
RECTIFIER DIODE |
TRSYS |
58 |
TR2906SZ35 |
3500 V, rectifier diode |
TRANSYS Electronics Limited |
59 |
TR2906SZ35 |
RECTIFIER DIODE |
TRSYS |
60 |
TR2906SZ36 |
3600 V, rectifier diode |
TRANSYS Electronics Limited |
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