| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AT49F002AN |
256K x 8 (2M bit), 5-Volt-Only, Bottom Boot Parametric Block Flash |
Atmel |
| 32 |
AT49F002ANT |
256K x 8 (2M bit), 5-Volt-Only, Top Boot Parametric Block Flash |
Atmel |
| 33 |
AT49F002AT |
256K x 8 (2M bit), 5-Volt-Only, Top Boot Parametric Block Flash |
Atmel |
| 34 |
AT49F002T |
256K x 8 (2M bit), 5-Volt-Only, Top Boot Parametric Block Flash |
Atmel |
| 35 |
AT49V002ANT |
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash |
Atmel |
| 36 |
AT49V002AT |
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash |
Atmel |
| 37 |
BSO 612 CV |
SIPMOS® Parametric Search |
Infineon |
| 38 |
BSO 615 C |
SIPMOS® Parametric Search |
Infineon |
| 39 |
CA3096C |
NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters |
Intersil |
| 40 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 41 |
CAY10 |
Gallium Arsenide parametric amplifier Varactor Diode |
Philips |
| 42 |
CXY10 |
Gallium arsenide diode with a high cut-off frequency for use in parametric amplifers, frequency multipliers and switches |
Mullard |
| 43 |
DESIGN TOPICS |
Parameters, Gain, stability, noise figure, dynamic range, etc. |
SGS-ATES |
| 44 |
EVAL-AD5520EB |
Per-pin Parametric Measurement Unit / Source Measure Unit |
Analog Devices |
| 45 |
KT830L11 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 46 |
KT830L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 47 |
KT830L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 48 |
KT830L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells . Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 49 |
KT830W11 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 50 |
KT830W15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 51 |
KT830W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 52 |
KT830W55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 53 |
KT831L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 54 |
KT831L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 55 |
KT831L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 56 |
KT831W15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 57 |
KT831W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 58 |
KT831W55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 59 |
KT832L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 60 |
KT832L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
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