| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N2835RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 32 |
1N2836RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 33 |
1N2837RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 34 |
1N2838RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 35 |
1N2839RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 36 |
1N2840RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 37 |
1N2841RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 38 |
1N2842RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 39 |
1N2843RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 40 |
1N2844RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 41 |
1N2845RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 42 |
1N2846RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 43 |
1N4557RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 44 |
1N4558RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 45 |
1N4559RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 46 |
1N4560RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 47 |
1N4561RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 48 |
1N4562RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 49 |
1N4563RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 50 |
1N4564RCE3 |
Zener Voltage Regulator Diode |
Microsemi |
| 51 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 52 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 53 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 54 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 55 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 56 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 57 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 58 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 59 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 60 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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