| No. |
Part Name |
Description |
Manufacturer |
| 31 |
FERD30M45CG-TR |
Field effect rectifier |
ST Microelectronics |
| 32 |
FERD30M45CR |
Field effect rectifier |
ST Microelectronics |
| 33 |
FERD30M45CT |
Field effect rectifier |
ST Microelectronics |
| 34 |
FERD30S50 |
Field effect rectifier |
ST Microelectronics |
| 35 |
FERD30S50DJF-TR |
Field effect rectifier |
ST Microelectronics |
| 36 |
IRD3899 |
50V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 37 |
IRD3900 |
100V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 38 |
IRD3901 |
200V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 39 |
IRD3902 |
300V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 40 |
IRD3903 |
400V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 41 |
IRD3909 |
50V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 42 |
IRD3909 |
Diode Switching 50V 30A 2-Pin DO-5 |
New Jersey Semiconductor |
| 43 |
IRD3910 |
100V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 44 |
IRD3911 |
200V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 45 |
IRD3912 |
300V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 46 |
IRD3913 |
400V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 47 |
IRD3913 |
Diode Switching 400V 30A 2-Pin DO-5 |
New Jersey Semiconductor |
| 48 |
KM416RD32AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 49 |
KM416RD32AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 50 |
KM416RD32C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 51 |
KM416RD32D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 52 |
KM418RD32AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 53 |
KM418RD32AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 54 |
KM418RD32C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 55 |
KM418RD32D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 56 |
MAX6439UTEHRD3+ |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
MAXIM - Dallas Semiconductor |
| 57 |
MAX6440UTEHRD3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
MAXIM - Dallas Semiconductor |
| 58 |
MAX6715UTMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 59 |
MAX6716UTMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 60 |
MAX6717UKMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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