| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N5485_D75Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 32 |
2N5486 |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 33 |
2N5486 |
N-Channel RF Amplifier |
National Semiconductor |
| 34 |
2N5486_D26Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 35 |
2N5486_D27Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 36 |
2N5486_D74Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 37 |
2N5952_D74Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 38 |
2N5952_D75Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 39 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
| 40 |
2N915 |
Silicon NPN planar RF transistor for non-saturating switching circuits, RF amplifiers and oscillator circuits |
AEG-TELEFUNKEN |
| 41 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 42 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 43 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 44 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 45 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 46 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 47 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 48 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 49 |
2SC1393 |
Transistors TV VHF TUNER RF AMPLIFIER(FORWARD AGC) |
USHA India LTD |
| 50 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 51 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 52 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 53 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 54 |
2SC2063 |
RF Amplifier Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 55 |
2SC2076 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 56 |
2SC2153 |
Si NPN planar. RF amplifier. |
Panasonic |
| 57 |
2SC2561 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 58 |
2SC283H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier |
Hitachi Semiconductor |
| 59 |
2SC3122 |
Transistor Silicon NPN Epitaxial Planar Type TV VHF RF Amplifier Applications |
TOSHIBA |
| 60 |
2SC3374 |
VHF AMPLIFIER VHF TV TUNER RF AMPLIFIER |
Hitachi Semiconductor |
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