No. |
Part Name |
Description |
Manufacturer |
31 |
IRF1503L |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
32 |
IRF1503LPBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
33 |
IRF1503PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
34 |
IRF1503S |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
35 |
IRF1503STRLPBF |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
36 |
IRF150CF |
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
37 |
IRF150SMD |
N-CHANNEL POWER MOSFET |
SemeLAB |
38 |
IRF151 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
39 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
40 |
IRF151 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
41 |
IRF151 |
Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
42 |
IRF151 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
43 |
IRF151 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 40A |
Siliconix |
44 |
IRF152 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
45 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
46 |
IRF152 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
47 |
IRF152 |
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
48 |
IRF152 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
49 |
IRF152 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 33A |
Siliconix |
50 |
IRF152R |
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
51 |
IRF153 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
52 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
53 |
IRF153 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
54 |
IRF153 |
Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
55 |
IRF153 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
56 |
IRF153 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 33A |
Siliconix |
57 |
IRF153R |
Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
58 |
MBRF15100CT |
Rectifier: Schottky |
Taiwan Semiconductor |
59 |
MBRF15150CT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
60 |
MBRF1535CT |
SCHOTTKY ISOLATED PLASTIC RECTIFIER |
General Semiconductor |
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