| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRF353 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 32 |
IRF353 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 33 |
IRF353 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 34 |
IRF353 |
Trans MOSFET N-CH 350V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 35 |
IRF353 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 36 |
IRF353 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 13A |
Siliconix |
| 37 |
IRF3546M |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
| 38 |
IRF3546MTRPBF |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
| 39 |
MCRF355 |
The MCRF355 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features optimized at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran |
Microchip |
| 40 |
MCRF355 |
The MCRF355 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features optimized at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran |
Microchip |
| 41 |
PB-IRF3515L |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 42 |
PB-IRF3515S |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 43 |
RF3511 |
1920 - 1980 MHz, 3 V WCDMA Band 1 Power Amplifier Module |
Qorvo |
| 44 |
RF3512 |
1850 - 1910 MHz, 3 V WCDMA Band 2 Power Amplifier Module |
Qorvo |
| 45 |
RF3514 |
1710 - 1755 MHz, 3 V WCDMA Band 4 Power Amplifier Module |
Qorvo |
| 46 |
RF3515 |
824 - 849 MHz, 3 V WCDMA Band 5 Power Amplifier Module |
Qorvo |
| 47 |
RF3518 |
880 - 915 MHz, 3 V WCDMA Band 8 Power Amplifier Module |
Qorvo |
| 48 |
STK14CA8-RF35 |
128K x 8 AutoStoreTM nvSRAM QuantumTrapTM CMOS Nonvolatile Static RAM |
SIMTEK |
| 49 |
STK14CA8-RF35I |
128K x 8 AutoStoreTM nvSRAM QuantumTrapTM CMOS Nonvolatile Static RAM |
SIMTEK |
| 50 |
STK14D88-RF35 |
32K x 8 AutoStore nvSRAM CMOS Nonvolatile Static RAM |
SIMTEK |
| 51 |
STK14D88-RF35I |
32K x 8 AutoStore nvSRAM CMOS Nonvolatile Static RAM |
SIMTEK |
| 52 |
STK17TA8-RF35 |
nvTime�� Event Data Recorder 128K x 8 AutoStore�� nvSRAM with Real-Time Clock Product Preview |
SIMTEK |
| 53 |
STK17TA8-RF35I |
nvTime�� Event Data Recorder 128K x 8 AutoStore�� nvSRAM with Real-Time Clock Product Preview |
SIMTEK |
| 54 |
TRF3520 |
GSM RF MODULATOR/DRIVER AMPLIFIER |
Texas Instruments |
| 55 |
TRF3520PFB |
GSM RF MODULATOR/DRIVER AMPLIFIER |
Texas Instruments |
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