| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRF610STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 32 |
IRF611 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 33 |
IRF611 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 34 |
IRF611 |
Trans MOSFET N-CH 150V 2.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 35 |
IRF611 |
N-Channel Power MOSFET |
Samsung Electronic |
| 36 |
IRF611 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A |
Siliconix |
| 37 |
IRF612 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 38 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 39 |
IRF612 |
Trans MOSFET N-CH 200V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 40 |
IRF612 |
N-Channel Power MOSFET |
Samsung Electronic |
| 41 |
IRF612 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2A |
Siliconix |
| 42 |
IRF613 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 43 |
IRF613 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 44 |
IRF613 |
Trans MOSFET N-CH 150V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 45 |
IRF613 |
N-Channel Power MOSFET |
Samsung Electronic |
| 46 |
IRF613 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2A |
Siliconix |
| 47 |
IRF614 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 48 |
IRF614 |
2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET |
Intersil |
| 49 |
IRF614B |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 50 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
| 51 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
| 52 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
| 53 |
IRF614PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 54 |
IRF614S |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 55 |
IRF6150 |
-20V Dual P-Channel HEXFET Power MOSFET in a 16-Lead FlipFET package |
International Rectifier |
| 56 |
IRF6156 |
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET |
International Rectifier |
| 57 |
MRF616 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 58 |
MRF618 |
15W - 470MHz Controlled Q RF Power Transistor NPN Silicon |
Motorola |
| 59 |
MRF619 |
25W - 470 MHz - Controlled Q RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
| 60 |
PB-IRF6100 |
Leaded -20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
| | | |
