No. |
Part Name |
Description |
Manufacturer |
31 |
RM20TPM-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
32 |
RM20TPM-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
33 |
RM20TPM-24 |
Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts) |
Powerex Power Semiconductors |
34 |
RM20TPM-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
35 |
RM20TPM-2H |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
36 |
RM20TPM-2H |
Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts) |
Powerex Power Semiconductors |
37 |
RM20TPM-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
38 |
RM20TPM-H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
39 |
RM20TPM-H |
Three-Phase Diode Bridge Modules (40 Amperes/800 Volts) |
Powerex Power Semiconductors |
40 |
RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
41 |
RM20TPM-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
42 |
SRM2017C |
CMOS 16K Bit Static RAM |
Epson Company |
43 |
SRM20V100 |
1M-Bit Static RAM |
Epson Company |
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