| No. |
Part Name |
Description |
Manufacturer |
| 31 |
RM500HA-H |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 32 |
RM500HA-M |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 33 |
RM500UZ-24 |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 34 |
RM500UZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 35 |
RM500UZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 36 |
RM500UZ-2H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 37 |
RM500UZ-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
| 38 |
RM500UZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 39 |
RM500UZ-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 40 |
RM500UZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 41 |
RM50C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 42 |
RM50C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 43 |
RM50CA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 44 |
RM50CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 45 |
RM50CA-XXF |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 46 |
RM50CA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 47 |
RM50D2Z-40 |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 48 |
RM50DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 49 |
RM50DA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 50 |
RM50DA-C1A-XXS |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 51 |
RM50DA-XXF |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 52 |
RM50DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 53 |
RM50DA/CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 54 |
RM50DA/CA/C1A-XXS |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 55 |
RM50HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 56 |
RM50HG-12S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 57 |
RM50HG-12S |
MITSUBISHI FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 58 |
RM50HG-12S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 59 |
RM50HG-12S |
Super Fast Recovery Single Diode (50 Amperes/600 Volts) |
Powerex Power Semiconductors |
| 60 |
RM50TC-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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