No. |
Part Name |
Description |
Manufacturer |
31 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
32 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
33 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
34 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
35 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
36 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
37 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
38 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
39 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
40 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
41 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
42 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
43 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
44 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
45 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
46 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
47 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
48 |
BF960 |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE |
Vishay |
49 |
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
TEMIC |
50 |
BF961 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
51 |
BF961A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
52 |
BF961B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
53 |
BF964 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
54 |
BF964S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
55 |
BF966S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
56 |
BF988 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
57 |
BF994 |
Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners) |
Siemens |
58 |
BF994 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
59 |
BF994S |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) |
Siemens |
60 |
BF994S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
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