| No. |
Part Name |
Description |
Manufacturer |
| 31 |
SCDUPLEX,1X9,LR,3,3V |
Transceivers by Form-factor MSA - |
Infineon |
| 32 |
SCDUPLEX,1X9,LR,5V |
Transceivers by Form-factor MSA - |
Infineon |
| 33 |
SCDUPLEX,IR,1X9,3,3V |
Transceivers by Form-factor MSA - ATM/SONET/SDH, 1300 nm, 622 Mbit/s, 15 km, 1x9, SC Duplex Connector, 3.3 V, DC/DC coupling |
Infineon |
| 34 |
SCDUPLEX,IR,1X9,3.3V,-40 |
Transceivers by Form-factor MSA - ATM/SONET/SDH, 1300 nm, 622 Mbit/s, 15 km, 1x9, DC/DC coupling, Ext. Temp. Range, SC, 3.3 V |
Infineon |
| 35 |
SFF,2X10,LC,TTL,IR |
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 15 km, 2x10, LC Connector, with collar, AC-AC-Coupling |
Infineon |
| 36 |
SFF,2X5/2X10,LC |
Transceivers by Standard - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 2 km, 2x5/2x10, LC Connector |
Infineon |
| 37 |
SFFSM,2X5,LC,PECL |
Transceivers by Standard - 1300 nm 622 MBd, 2x5, LC connector, with collar, DC/DC coupling, 21/ 15 km |
Infineon |
| 38 |
SFFSM,2X5/2X10,LC |
Transceivers by Standard - 1300 nm 622 MBd, 2x5, LC connector, with collar, 21/ 15 km |
Infineon |
| 39 |
SM-ATM1X9IRDC/DC5V |
Transceivers by Form-factor MSA - |
Infineon |
| 40 |
STDUPLEX,1X9,LR,5V |
Transceivers by Form-factor MSA - |
Infineon |
| 41 |
TBP18S030 |
256 BITS (32 WORDS BY 8 BITS) PROGRAMMABLE READ-ONLY MEMORIES |
Texas Instruments |
| 42 |
TBP18SA030 |
256 BITS (32 WORDS BY 8 BITS) PROGRAMMABLE READ-ONLY MEMORIES |
Texas Instruments |
| 43 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 44 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 45 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 46 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 47 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 48 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 49 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 50 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 51 |
THMY644071BEG-10 |
4,194,304-words by 64-BITS synchronous DRAM module |
TOSHIBA |
| 52 |
THMY644071BEG-80 |
4,194,304-words by 64-BITS synchronous DRAM module |
TOSHIBA |
| 53 |
TMM2018AP |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 54 |
TMM2018AP-25 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 55 |
TMM2018AP-35 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 56 |
TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 57 |
TRANSCEIVERSFF2X5GB |
Transceivers by Form-factor MSA - Multimode 850nm VCSEL TRX, (AC/AC coupling), 1.25 GBit/s LC, 2x5, 3.3V |
Infineon |
| 58 |
UT8Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V. |
Aeroflex Circuit Technology |
| 59 |
UT9Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V and 5V. |
Aeroflex Circuit Technology |
| 60 |
V23818-N15-L16 |
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 2 km, 2x10, LC Connector, with collar, DC-DC Coupling ext. Temp |
Infineon |
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