No. |
Part Name |
Description |
Manufacturer |
31 |
1N4707 |
LOW LEVEL ZENER DIODES ULTRA-LOW CURRENT: 50 ��A - LOW LEAKAGE |
Knox Semiconductor Inc |
32 |
1N4708 |
LOW LEVEL ZENER DIODES ULTRA-LOW CURRENT: 50 ��A - LOW LEAKAGE |
Knox Semiconductor Inc |
33 |
1N4709 |
LOW LEVEL ZENER DIODES ULTRA-LOW CURRENT: 50 ��A - LOW LEAKAGE |
Knox Semiconductor Inc |
34 |
1N4710 |
LOW LEVEL ZENER DIODES ULTRA-LOW CURRENT: 50 ��A - LOW LEAKAGE |
Knox Semiconductor Inc |
35 |
1N4711 |
LOW LEVEL ZENER DIODES ULTRA-LOW CURRENT: 50 ��A - LOW LEAKAGE |
Knox Semiconductor Inc |
36 |
1N4712 |
LOW LEVEL ZENER DIODES ULTRA-LOW CURRENT: 50 ��A - LOW LEAKAGE |
Knox Semiconductor Inc |
37 |
1N4713 |
LOW LEVEL ZENER DIODES ULTRA-LOW CURRENT: 50 ��A - LOW LEAKAGE |
Knox Semiconductor Inc |
38 |
1N4714 |
LOW LEVEL ZENER DIODES ULTRA-LOW CURRENT: 50 ��A - LOW LEAKAGE |
Knox Semiconductor Inc |
39 |
1N5152 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band |
Mullard |
40 |
1N5153 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band |
Mullard |
41 |
1N5155 |
Silicon planar epitaxial varactor diode for use in multipliers up to C band |
Mullard |
42 |
1N6373 |
Diode TVS Uni-Dir 5V 1.5KW 2-Pin Case 41A-04 |
New Jersey Semiconductor |
43 |
1N6374 |
Diode TVS Uni-Dir 8V 1.5KW 2-Pin Case 41A-04 |
New Jersey Semiconductor |
44 |
1N6375 |
Diode TVS Uni-Dir 10V 1.5KW 2-Pin Case 41A-04 |
New Jersey Semiconductor |
45 |
1N6376 |
Diode TVS Uni-Dir 12V 1.5KW 2-Pin Case 41A-04 |
New Jersey Semiconductor |
46 |
1N6376A |
Diode TVS Uni-Dir 12V 1.5KW 2-Pin Case 41A-04 |
New Jersey Semiconductor |
47 |
1N6377 |
Diode TVS Uni-Dir 15V 1.5KW 2-Pin Case 41A-04 |
New Jersey Semiconductor |
48 |
1N6378 |
Diode TVS Uni-Dir 18V 1.5KW 2-Pin Case 41A-04 |
New Jersey Semiconductor |
49 |
1N6379 |
Diode TVS Uni-Dir 22V 1.5KW 2-Pin Case 41A-04 |
New Jersey Semiconductor |
50 |
1N6380 |
Diode TVS Uni-Dir 36V 1.5KW 2-Pin Case 41A-04 |
New Jersey Semiconductor |
51 |
1N6381 |
Diode TVS Uni-Dir 45V 1.5KW 2-Pin Case 41A-04 |
New Jersey Semiconductor |
52 |
1SMA5.0AT3-D |
400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* |
ON Semiconductor |
53 |
1SMB5.0AT3-D |
600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* |
ON Semiconductor |
54 |
1SMC5.0AT3-D |
1500 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* |
ON Semiconductor |
55 |
1SMC5.OAT3-D |
1500 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* |
ON Semiconductor |
56 |
27256 |
256K (32k x 8) Bit NMOS UV Erasable PROM |
General Semiconductor |
57 |
27C128 |
128K (16K x 8) CMOS UV Erasable PROM |
General Semiconductor |
58 |
27C256 |
256K CMOS UV Erasable PROM (32K X 8) |
General Semiconductor |
59 |
27C256 |
256K CMOS UV Erasable PROM (32K X 8) |
Philips |
60 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
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