| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MA1100-1 |
For DCS1800 - 30W Power Amplifier |
Mitsubishi Electric Corporation |
| 32 |
MAX2651 |
GSM900 and DCS1800/PCS1900 Dual-Band, Low-Noise Amplifiers |
MAXIM - Dallas Semiconductor |
| 33 |
MAX2651EUB |
GSM900 and DCS1800/PCS1900 Dual-Band / Low-Noise Amplifiers |
MAXIM - Dallas Semiconductor |
| 34 |
MAX2652 |
GSM900 and DCS1800/PCS1900 Dual-Band, Low-Noise Amplifiers |
MAXIM - Dallas Semiconductor |
| 35 |
MAX2652EUB |
GSM900 and DCS1800/PCS1900 Dual-Band / Low-Noise Amplifiers |
MAXIM - Dallas Semiconductor |
| 36 |
MAX2653 |
GSM900 and DCS1800/PCS1900 Dual-Band, Low-Noise Amplifiers |
MAXIM - Dallas Semiconductor |
| 37 |
MAX2653EUA |
GSM900 and DCS1800/PCS1900 Dual-Band / Low-Noise Amplifiers |
MAXIM - Dallas Semiconductor |
| 38 |
MAZS1800H |
Silicon planar type |
Panasonic |
| 39 |
MAZS1800L |
Silicon planar type |
Panasonic |
| 40 |
MAZS1800M |
Silicon planar type |
Panasonic |
| 41 |
MRFIC1817 |
1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT |
Motorola |
| 42 |
MRFIC1818 |
1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT |
Motorola |
| 43 |
PCS1900 |
Triple-band VCO for GSM900/DCS1800/PCS1900 |
National Semiconductor |
| 44 |
PF08103A |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Hitachi Semiconductor |
| 45 |
PF08103B |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Hitachi Semiconductor |
| 46 |
PF08109B |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone |
Renesas |
| 47 |
RF2145 |
DCS1800/1900 POWER AMPLIFIER |
RF Micro Devices |
| 48 |
RF2145PCBA |
DCS1800/1900 POWER AMPLIFIER |
RF Micro Devices |
| 49 |
SKY77321 |
PA Module for Tri-band EGSM900 DCS1800 PCS1900 / GPRS |
Skyworks Solutions |
| 50 |
T468S1800 |
Fast Switching Thyristor |
IPRS Baneasa |
| 51 |
T630S1800 |
Fast Switching Thyristor |
IPRS Baneasa |
| | | |
