No. |
Part Name |
Description |
Manufacturer |
31 |
1SS303-T2 |
Switching diode |
NEC |
32 |
1SS304 |
Switching diode |
NEC |
33 |
1SS304-T1 |
Switching diode |
NEC |
34 |
1SS304-T2 |
Switching diode |
NEC |
35 |
1SS305 |
Silicon switching diode |
NEC |
36 |
1SS305-T1 |
Silicon switching diode |
NEC |
37 |
1SS305-T2 |
Silicon switching diode |
NEC |
38 |
1SS306 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
39 |
1SS307 |
Diode Silicon Epitaxial Planar Type General Puropose Rectifier Applications |
TOSHIBA |
40 |
1SS308 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
41 |
1SS309 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
42 |
2S301A |
Bipolar NPN Device. |
SemeLAB |
43 |
2S304A |
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. |
SemeLAB |
44 |
2SS30L |
Schottky Diode |
Rectron Semiconductor |
45 |
32C408BRPFS30 |
4-megabit (512K x 8-bit) SRAM |
Maxwell Technologies |
46 |
33C408RPFS30 |
4-megabit (512K x 8-bit) CMOS SRAM |
Maxwell Technologies |
47 |
33C408RTFS30 |
4-megabit (512K x 8-bit) CMOS SRAM |
Maxwell Technologies |
48 |
48IMS30-0302-9G |
Dual outputs 5V & 3.3V ; 3.3V & 1.8V |
Power-One |
49 |
48IMS30-0503-9G |
Dual outputs 5V & 3.3V ; 3.3V & 1.8V |
Power-One |
50 |
54LS30 |
8-Input NAND Gate |
National Semiconductor |
51 |
54LS30DMQB |
8-Input NAND Gate |
National Semiconductor |
52 |
54LS30FMQB |
8-Input NAND Gate |
National Semiconductor |
53 |
54LS30LMQB |
8-Input NAND Gate |
National Semiconductor |
54 |
61053-101 |
0.7-2mA 50V silicon phototransistor PIGTAIL: type GS3020 |
Micropac Industries |
55 |
7206FRPES30 |
High-speed epi-CMOS (16K x 9-bit) parallel FIFO |
Maxwell Technologies |
56 |
74ALS30A |
8-Input NAND gate |
Philips |
57 |
74ALS30AD |
8-Input NAND gate |
Philips |
58 |
74ALS30AN |
8-Input NAND gate |
Philips |
59 |
74LS30 |
8-Input NAND Gate |
Fairchild Semiconductor |
60 |
74LS30 |
8-input Positive NAND Gate |
Hitachi Semiconductor |
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