| No. |
Part Name |
Description |
Manufacturer |
| 31 |
NX8567SAS318-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1531.898 nm. Frequency 195.70 THz. SC-UPC connector. |
NEC |
| 32 |
SY100S318 |
5-WIDE 5, 4, 4, 4, 2 OA/OAI GATE |
Micrel Semiconductor |
| 33 |
TVS318 |
TRANSIENT VOLTAGE SUPPRESORS |
Microsemi |
| 34 |
TVS318 |
Diode TVS Single 18V 150W 2-Pin Case A |
New Jersey Semiconductor |
| 35 |
TVS318SM |
Transient Voltage Suppressor |
Microsemi |
| 36 |
VTS3180 |
Process photodiode. Isc = 3 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
| 37 |
VTS3181 |
Process photodiode. Isc = 1.50 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
| 38 |
VTS3182 |
Process photodiode. Isc = 0.69 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
| 39 |
VTS3183 |
Process photodiode. Isc = 0.64 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
| 40 |
VTS3184 |
Process photodiode. Isc = 0.33 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
| 41 |
VTS3185 |
Process photodiode. Isc = 0.16 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
| 42 |
VTS3186 |
Process photodiode. Isc = 80 microA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
| | | |
