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Datasheets for S426

Datasheets found :: 85
Page: | 1 | 2 | 3 |
No. Part Name Description Manufacturer
31 HM51S4260AZ-10 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
32 HM51S4260AZ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
33 HM51S4260AZ-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
34 HM51S4260CJ-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
35 HM51S4260CJ-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
36 HM51S4260CJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
37 HM51S4260CJ-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
38 HM51S4260CLJ-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
39 HM51S4260CLJ-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
40 HM51S4260CLJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
41 HM51S4260CLJ-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
42 HM51S4260CLTT-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
43 HM51S4260CLTT-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
44 HM51S4260CLTT-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
45 HM51S4260CLTT-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
46 HM51S4260CTT-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
47 HM51S4260CTT-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
48 HM51S4260CTT-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
49 HM51S4260CTT-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
50 ICS426 Serial ATA/Fibre Channel Clock Synthesizer Texas Instruments
51 LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Systems
52 PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor Nexperia
53 PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor NXP Semiconductors
54 PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor Nexperia
55 PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor NXP Semiconductors
56 PBSS4260PANPS 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor Nexperia
57 PBSS4260PANS 60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor Nexperia
58 PBSS4260QA 60 V, 2 A NPN low VCEsat (BISS) transistor Nexperia
59 Q62702-S426 PNP SILICON PLANAR TRANSISTORS Siemens
60 S4260 Standard Rectifier (trr more than 500ns) Microsemi


Datasheets found :: 85
Page: | 1 | 2 | 3 |



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