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Datasheets for S4260

Datasheets found :: 48
Page: | 1 | 2 |
No. Part Name Description Manufacturer
31 HM51S4260CLJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
32 HM51S4260CLJ-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
33 HM51S4260CLTT-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
34 HM51S4260CLTT-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
35 HM51S4260CLTT-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
36 HM51S4260CLTT-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
37 HM51S4260CTT-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
38 HM51S4260CTT-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
39 HM51S4260CTT-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
40 HM51S4260CTT-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
41 PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor Nexperia
42 PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor NXP Semiconductors
43 PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor Nexperia
44 PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor NXP Semiconductors
45 PBSS4260PANPS 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor Nexperia
46 PBSS4260PANS 60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor Nexperia
47 PBSS4260QA 60 V, 2 A NPN low VCEsat (BISS) transistor Nexperia
48 S4260 Standard Rectifier (trr more than 500ns) Microsemi


Datasheets found :: 48
Page: | 1 | 2 |



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