| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRHMS597260 |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package |
International Rectifier |
| 32 |
IRHMS597Z60 |
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-254AA package |
International Rectifier |
| 33 |
IRHMS597Z60SCS |
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-254AA package |
International Rectifier |
| 34 |
IRHYS593034CM |
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package |
International Rectifier |
| 35 |
IRHYS593Z30CM |
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package |
International Rectifier |
| 36 |
IRHYS597034CM |
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package |
International Rectifier |
| 37 |
IRHYS597Z30CM |
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package |
International Rectifier |
| 38 |
KS5911 |
CMOS DIGITAL INTEGRATED CIRCUIT |
Samsung Electronic |
| 39 |
KS5990 |
Digital Signal Processor |
Samsung Electronic |
| 40 |
KS5991 |
Digital Signal Processor |
Samsung Electronic |
| 41 |
LM3S5951 |
Stellaris LM3S Microcontroller 100-LQFP -40 to 85 |
Texas Instruments |
| 42 |
LM3S5951-IBZ80-C5 |
Stellaris LM3S Microcontroller 108-NFBGA -40 to 85 |
Texas Instruments |
| 43 |
LM3S5951-IBZ80-C5T |
Stellaris LM3S Microcontroller 108-NFBGA -40 to 85 |
Texas Instruments |
| 44 |
LM3S5951-IQC80-C5 |
Stellaris LM3S Microcontroller 100-LQFP -40 to 85 |
Texas Instruments |
| 45 |
LM3S5951-IQC80-C5T |
Stellaris LM3S Microcontroller 100-LQFP -40 to 85 |
Texas Instruments |
| 46 |
LM3S5956 |
Stellaris LM3S Microcontroller 64-LQFP -40 to 85 |
Texas Instruments |
| 47 |
LM3S5956-IQR80-C5 |
Stellaris LM3S Microcontroller 64-LQFP -40 to 85 |
Texas Instruments |
| 48 |
LM3S5956-IQR80-C5T |
Stellaris LM3S Microcontroller 64-LQFP -40 to 85 |
Texas Instruments |
| 49 |
LS5905 |
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
Linear Systems |
| 50 |
LS5905-9 |
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
Linear Systems |
| 51 |
LS5906 |
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
Linear Systems |
| 52 |
LS5907 |
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
Linear Systems |
| 53 |
LS5908 |
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
Linear Systems |
| 54 |
LS5909 |
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
Linear Systems |
| 55 |
LS5911 |
IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET |
Linear Systems |
| 56 |
LS5911-2 |
IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET |
Linear Systems |
| 57 |
LS5912 |
IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET |
Linear Systems |
| 58 |
LS5912C |
IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET |
Linear Systems |
| 59 |
NX8563LAS597-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1559.79 nm. Frequency 192.20 THz. SC-UPC. |
NEC |
| 60 |
NX8563LAS597-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1559.79 nm. Frequency 192.20 THz. SC-APC. |
NEC |
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