No. |
Part Name |
Description |
Manufacturer |
31 |
DSPIC33FJ64GS606T-E/PT |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
32 |
DSPIC33FJ64GS606T-I/MR |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
33 |
DSPIC33FJ64GS606T-I/PT |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
34 |
DSS60600MZ4 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
35 |
DSS60600MZ4-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
36 |
DSS60601MZ4 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
37 |
DSS60601MZ4-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
38 |
FDS6064N3 |
20V N-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
39 |
FDS6064N7 |
20V N-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
40 |
IS606 |
Photon coupled isolator Ga As infrared emitting diode & light activated SCR |
ISOCOM |
41 |
KS6060 |
Silicon Diode - Standard Rectifier |
IPRS Baneasa |
42 |
KS6060 |
Silicon rectifier diode 60A |
IPRS Baneasa |
43 |
KS6060 |
Si POWER DIODE |
IPRS Baneasa |
44 |
KS6060 |
60A 600V SILICON RECTIFIER DIODE |
IPRS Baneasa |
45 |
KS6060 |
60A 600V Rectifier Diode |
IPRS Baneasa |
46 |
KS6060-R |
60A 600V Rectifier Diode |
IPRS Baneasa |
47 |
KS6060-R-S |
60A 600V Rectifier Diode |
IPRS Baneasa |
48 |
KS6060-S |
Silicon Diode - Standard Rectifier |
IPRS Baneasa |
49 |
KS6060-S |
60A 600V Rectifier Diode |
IPRS Baneasa |
50 |
KS6060-SR |
Silicon Diode - Standard Rectifier, reverse polarity |
IPRS Baneasa |
51 |
KS6060R |
Silicon Diode - Standard Rectifier, reverse polarity |
IPRS Baneasa |
52 |
KS6060R |
Silicon rectifier diode 60A |
IPRS Baneasa |
53 |
KS6060R |
60A 600V SILICON RECTIFIER DIODE, REVERSE POLARITY |
IPRS Baneasa |
54 |
NSS60600MZ4 |
Low VCE(sat) Transistor, PNP, 60 V, 6.0 A, SOT-223 Package |
ON Semiconductor |
55 |
NSS60601MZ4 |
Low VCE(sat) Transistor, NPN, 60 V, 6.0 A |
ON Semiconductor |
56 |
NX8563LAS606-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. SC-UPC. |
NEC |
57 |
NX8563LAS606-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. SC-APC. |
NEC |
58 |
NX8567SAS606-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. FC-UPC connector. |
NEC |
59 |
NX8567SAS606-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-UPC connector. |
NEC |
60 |
PS606R |
FAST SWITCHING RECOVERY RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes) |
Panjit International Inc |
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