No. |
Part Name |
Description |
Manufacturer |
31 |
1808SC101KA13A |
High Voltage MLC Chip |
AVX Corporation |
32 |
1808SC101KA19A |
High Voltage MLC Chip |
AVX Corporation |
33 |
1808SC101KAT1A |
High Voltage MLC Chip |
AVX Corporation |
34 |
1808SC101KAT3A |
High Voltage MLC Chip |
AVX Corporation |
35 |
1808SC101KAT9A |
High Voltage MLC Chip |
AVX Corporation |
36 |
1808SC101MA11A |
High Voltage MLC Chip |
AVX Corporation |
37 |
1808SC101MA13A |
High Voltage MLC Chip |
AVX Corporation |
38 |
1808SC101MA19A |
High Voltage MLC Chip |
AVX Corporation |
39 |
1808SC101MAT1A |
High Voltage MLC Chip |
AVX Corporation |
40 |
1808SC101MAT3A |
High Voltage MLC Chip |
AVX Corporation |
41 |
1808SC101MAT9A |
High Voltage MLC Chip |
AVX Corporation |
42 |
1808SC101ZA11A |
High Voltage MLC Chip |
AVX Corporation |
43 |
1808SC101ZA13A |
High Voltage MLC Chip |
AVX Corporation |
44 |
1808SC101ZA19A |
High Voltage MLC Chip |
AVX Corporation |
45 |
1808SC101ZAT1A |
High Voltage MLC Chip |
AVX Corporation |
46 |
1808SC101ZAT3A |
High Voltage MLC Chip |
AVX Corporation |
47 |
1808SC101ZAT9A |
High Voltage MLC Chip |
AVX Corporation |
48 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
49 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
50 |
2SC1001 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
51 |
2SC1004 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
52 |
2SC1004 |
Silicon NPN triple diffused MESA power transistor, TV vertical output applications |
TOSHIBA |
53 |
2SC1004A |
Silicon NPN triple diffused MESA power transistor, TV vertical output applications |
TOSHIBA |
54 |
2SC1008 |
TRANSISTOR NPN |
DONG GUAN SHI HUA YUAN ELECTRON CO. |
55 |
2SC1008 |
Medium Power Amplifiers and Switches |
Unknow |
56 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
57 |
2SC1008-G |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
58 |
2SC1008-O |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
59 |
2SC1008-R |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
60 |
2SC1008-Y |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| | | |