No. |
Part Name |
Description |
Manufacturer |
31 |
SD1100C12C |
1200V 1400A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
32 |
SD1100C12L |
1200V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
33 |
SD1100C16C |
1600V 1400A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
34 |
SD1100C16L |
1600V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
35 |
SD1100C20C |
2000V 1400A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
36 |
SD1100C20L |
2000V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
37 |
SD1100C25C |
2500V 1100A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
38 |
SD1100C25L |
2500V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
39 |
SD1100C30C |
3000V 1100A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
40 |
SD1100C30L |
3000V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
41 |
SD1100C32C |
3200V 1100A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
42 |
SD1100C32L |
3200V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
43 |
SD1100CHP |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
44 |
SD1100DD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
45 |
SD1100HD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
46 |
SD1100P |
Rectifier: Schottky |
Taiwan Semiconductor |
47 |
SD1101BD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
48 |
SD1101CHP |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
49 |
SD1101DD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
50 |
SD1101HD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
51 |
SD1102BD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
52 |
SD1102CHP |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
53 |
SD1102DD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
54 |
SD1102HD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
55 |
SD1106AD |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
56 |
SD1106CHP |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
57 |
SD1106DD |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
58 |
SD1107BD |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
59 |
SD1107CHP |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
60 |
SD1107DD |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| | | |