| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2SD1615 |
NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD |
NEC |
| 32 |
2SD1615-T1 |
Silicon transistor |
NEC |
| 33 |
2SD1615-T2 |
Silicon transistor |
NEC |
| 34 |
2SD1615A |
NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD |
NEC |
| 35 |
2SD1615A-T1 |
Silicon transistor |
NEC |
| 36 |
2SD1615A-T2 |
Silicon transistor |
NEC |
| 37 |
2SD1616 |
Silicon transistor |
NEC |
| 38 |
2SD1616 |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 39 |
2SD1616 |
Transistor for audio frequency power amplifier |
USHA India LTD |
| 40 |
2SD1616(C) |
Silicon transistor |
NEC |
| 41 |
2SD1616(C)-T |
Silicon transistor |
NEC |
| 42 |
2SD1616-T |
Silicon transistor |
NEC |
| 43 |
2SD1616-T/JD |
Silicon transistor |
NEC |
| 44 |
2SD1616-T/JM |
Silicon transistor |
NEC |
| 45 |
2SD1616/JD |
Silicon transistor |
NEC |
| 46 |
2SD1616/JM |
Silicon transistor |
NEC |
| 47 |
2SD1616A |
NPN SILICON TRANSISTOR |
Micro Electronics |
| 48 |
2SD1616A |
Silicon transistor |
NEC |
| 49 |
2SD1616A |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 50 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 51 |
2SD1616A-T |
Silicon transistor |
NEC |
| 52 |
2SD1616A-T/JD |
Silicon transistor |
NEC |
| 53 |
2SD1616A-T/JM |
Silicon transistor |
NEC |
| 54 |
2SD1616A/JD |
Silicon transistor |
NEC |
| 55 |
2SD1616A/JM |
Silicon transistor |
NEC |
| 56 |
2SD1617 |
NPN Silicon Transistor |
NEC |
| 57 |
2SD1618 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat), NPN Single PCP |
ON Semiconductor |
| 58 |
2SD1618 |
Low-Voltage High-Current Amplifier, Muting Applications |
SANYO |
| 59 |
2SD1619 |
LF Amplifier, Electronic Governor Applications |
SANYO |
| 60 |
2SD1620 |
NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications |
SANYO |
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