| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2SD669-B |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 32 |
2SD669-C |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 33 |
2SD669-D |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 34 |
2SD669A |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 35 |
2SD669A |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 36 |
2SD669A |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 37 |
2SD669A-B |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 38 |
2SD669A-C |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 39 |
CSD667 |
0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 60 - 320 hFE |
Continental Device India Limited |
| 40 |
CSD667A |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 60 - 200 hFE |
Continental Device India Limited |
| 41 |
CSD667AB |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 60 - 120 hFE |
Continental Device India Limited |
| 42 |
CSD667AC |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 100 - 200 hFE |
Continental Device India Limited |
| 43 |
CSD667B |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 60 - 120 hFE |
Continental Device India Limited |
| 44 |
CSD667C |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 100 - 200 hFE |
Continental Device India Limited |
| 45 |
CSD667D |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 160 - 320 hFE |
Continental Device India Limited |
| 46 |
CSD669 |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 320 hFE. |
Continental Device India Limited |
| 47 |
CSD669A |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 200 hFE. |
Continental Device India Limited |
| 48 |
CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 49 |
CSD669AC |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 50 |
CSD669B |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 51 |
CSD669C |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 52 |
CSD669D |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 160 - 320 hFE. |
Continental Device India Limited |
| 53 |
HSD667A |
SILICON NPN EPITAXIAL |
Hi-Sincerity Microelectronics |
| 54 |
HSD669A |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 55 |
SD660CS |
DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes) |
Panjit International Inc |
| 56 |
SD660CS-T3 |
6.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
| 57 |
SD660CT |
SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes) |
Panjit International Inc |
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