| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CSB834 |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 200 hFE. Complementary CSD880 |
Continental Device India Limited |
| 32 |
CSB834O |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD880O |
Continental Device India Limited |
| 33 |
CSB834Y |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD880Y |
Continental Device India Limited |
| 34 |
CSD880 |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 300 hFE. Complementary CSB834 |
Continental Device India Limited |
| 35 |
CSD880GR |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150 - 300 hFE. Complementary CSB834GR |
Continental Device India Limited |
| 36 |
CSD880O |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB834O |
Continental Device India Limited |
| 37 |
CSD880Y |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB834Y |
Continental Device India Limited |
| 38 |
CSD882 |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 |
Continental Device India Limited |
| 39 |
CSD882E |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E |
Continental Device India Limited |
| 40 |
CSD882P |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P |
Continental Device India Limited |
| 41 |
CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q |
Continental Device India Limited |
| 42 |
CSD882R |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R |
Continental Device India Limited |
| 43 |
CSD88537ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 44 |
CSD88537ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 45 |
CSD88537NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 46 |
CSD88537NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 47 |
CSD88539ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
| 48 |
CSD88539ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
| 49 |
CSD88539NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
| 50 |
CSD88539NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
| 51 |
HSD88 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 52 |
HSD88 |
Diodes>Switching |
Renesas |
| 53 |
HSD880 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 54 |
HSD882 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 55 |
HSD882S |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 56 |
KSD880 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 57 |
KSD880 |
60 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 58 |
KSD880O |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 59 |
KSD880OPATU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 60 |
KSD880Y |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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