| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N5400G |
3A GENERAL PURPOSE GPP DIODES |
Leshan Radio Company |
| 32 |
1N5401G |
3A GENERAL PURPOSE GPP DIODES |
Leshan Radio Company |
| 33 |
1N5402G |
3A GENERAL PURPOSE GPP DIODES |
Leshan Radio Company |
| 34 |
1N5403G |
3A GENERAL PURPOSE GPP DIODES |
Leshan Radio Company |
| 35 |
1N5404G |
3A GENERAL PURPOSE GPP DIODES |
Leshan Radio Company |
| 36 |
1N5405G |
3A GENERAL PURPOSE GPP DIODES |
Leshan Radio Company |
| 37 |
1N5406G |
3A GENERAL PURPOSE GPP DIODES |
Leshan Radio Company |
| 38 |
1N5610 |
Diode TVS Single Uni-Dir 30.5V 1.5KW 2-Pin Case G |
New Jersey Semiconductor |
| 39 |
1N5611 |
Diode TVS Single Uni-Dir 40.3V 1.5KW 2-Pin Case G |
New Jersey Semiconductor |
| 40 |
1N5612 |
Diode TVS Single Uni-Dir 49V 1.5KW 2-Pin Case G |
New Jersey Semiconductor |
| 41 |
1N5613 |
Diode TVS Single Uni-Dir 175V 1.5KW 2-Pin Case G |
New Jersey Semiconductor |
| 42 |
1N5615 |
Diode Switching 200V 2A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 43 |
1N5617 |
Diode Switching 400V 2A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 44 |
1N5619 |
Diode Switching 600V 2A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 45 |
1N5621 |
Diode Switching 800V 2A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 46 |
1N5621A |
Diode Switching 800V 2A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 47 |
1N5623 |
Diode Switching 1KV 2A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 48 |
1N6079 |
Diode Switching 100V 12A 2-Pin Case G |
New Jersey Semiconductor |
| 49 |
1N6080 |
Diode Switching 100V 12A 2-Pin Case G |
New Jersey Semiconductor |
| 50 |
1N6081 |
Diode Switching 150V 12A 2-Pin Case G |
New Jersey Semiconductor |
| 51 |
1N6102 |
Diode TVS Single Bi-Dir 5.2V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 52 |
1N6103 |
Diode TVS Single Bi-Dir 5.7V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 53 |
1N6104 |
Diode TVS Single Bi-Dir 6.2V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 54 |
1N6105 |
Diode TVS Single Bi-Dir 6.9V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 55 |
1N6106 |
Diode TVS Single Bi-Dir 7.6V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 56 |
1N6107 |
Diode TVS Single Bi-Dir 8.4V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 57 |
1N6108 |
Diode TVS Single Bi-Dir 9.1V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 58 |
1N6109 |
Diode TVS Single Bi-Dir 9.9V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 59 |
1N6110 |
Diode TVS Single Bi-Dir 11.4V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 60 |
1N6111 |
Diode TVS Single Bi-Dir 12.2V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| | | |
