No. |
Part Name |
Description |
Manufacturer |
31 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
32 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
33 |
2N5060-D |
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors |
ON Semiconductor |
34 |
2N5060RL1 |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
35 |
2N5060RLRAG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
36 |
2N5061G |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
37 |
2N5061RLR |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
38 |
2N5061RLRAG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
39 |
2N5061RLRM |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
40 |
2N5062G |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
41 |
2N5062RLRAG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
42 |
2N5064 |
Thyristor sensitive gate |
Philips |
43 |
2N5064 |
Sensitive SCRs |
Teccor Electronics |
44 |
2N5064RLRMG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
45 |
2N5065 |
400 V, 0.8 A sensitive SCR |
Teccor Electronics |
46 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
47 |
2N6071 |
Sensitive Gate Triacs |
ON Semiconductor |
48 |
2N6071-D |
Sensitive Gate Triacs Silicon Bidirectional Thyristors |
ON Semiconductor |
49 |
2N6071A |
Sensitive Gate Triacs |
ON Semiconductor |
50 |
2N6071B |
Sensitive Gate Triacs |
ON Semiconductor |
51 |
2N6071BT |
Sensitive Gate Triacs |
ON Semiconductor |
52 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
53 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
54 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
55 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
56 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
57 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
58 |
2N6073B |
Sensitive Gate Triacs |
ON Semiconductor |
59 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
60 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
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