| No. |
Part Name |
Description |
Manufacturer |
| 31 |
DMS3016SSS |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE |
Diodes |
| 32 |
DMS3016SSS-13 |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE |
Diodes |
| 33 |
DMS3016SSSA |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE |
Diodes |
| 34 |
DMS3016SSSA-13 |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE |
Diodes |
| 35 |
FDB8444TS |
N-Channel PowerTrench MOSFET with Temperature Sensor 40V, 70A, 5mOhms |
Fairchild Semiconductor |
| 36 |
FDFC3N108 |
20V N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode |
Fairchild Semiconductor |
| 37 |
FDFC3N108_NL |
20V N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode |
Fairchild Semiconductor |
| 38 |
FDFS6N303 |
FETKEY N-Channel MOSFET with Schottky Diode |
Fairchild Semiconductor |
| 39 |
FDFS6N303_NL |
30V N-Channel MOSFET with Schottky Diode |
Fairchild Semiconductor |
| 40 |
FDR8321L |
P-Channel MOSFET With Gate Driver For Load Switch Application |
Fairchild Semiconductor |
| 41 |
FDR8521L |
P-Channel MOSFET With Gate Driver For Load Switch Application |
Fairchild Semiconductor |
| 42 |
FDW6923 |
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode |
Fairchild Semiconductor |
| 43 |
IRF6609TR1PBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 44 |
IRF6609TRPBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 45 |
IRF6613TR1PBF |
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 46 |
IRF6618TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 47 |
IRF6678TR1 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 48 |
IRF6678TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 49 |
IRF6678TRPBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 50 |
IRF6691 |
20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET package |
International Rectifier |
| 51 |
IRF6691TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 52 |
IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 53 |
IRFH5250D |
25V Single N-Channel HEXFET Power MOSFET with integrated Schottky Diode in a 5mm X 6mm PQFN package |
International Rectifier |
| 54 |
IRFH5250DTR2PBF |
25V Single N-Channel HEXFET Power MOSFET with integrated Schottky Diode in a 5mm X 6mm PQFN package |
International Rectifier |
| 55 |
IRFH5250DTRPBF |
25V Single N-Channel HEXFET Power MOSFET with integrated Schottky Diode in a 5mm X 6mm PQFN package |
International Rectifier |
| 56 |
IRFH5302D |
30V Single N-Channel HEXFET Power MOSFET with an integrated Schottky Diode in a 5mm X 6mm PQFN package |
International Rectifier |
| 57 |
IRFH5302DTRPBF |
30V Single N-Channel HEXFET Power MOSFET with an integrated Schottky Diode in a 5mm X 6mm PQFN package |
International Rectifier |
| 58 |
IXFN100N10S1 |
100V HiPerFET power MOSFET with schottky diodes |
IXYS |
| 59 |
IXFN100N10S2 |
100V HiPerFET power MOSFET with schottky diodes |
IXYS |
| 60 |
IXFN100N10S3 |
100V HiPerFET power MOSFET with schottky diodes |
IXYS |
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