| No. |
Part Name |
Description |
Manufacturer |
| 31 |
EN5810 |
Bipolar Transisitor, -50V, -1A, Low VCE(sat) PNP Single CPH6 |
ON Semiconductor |
| 32 |
HA-5330 |
Sample and Hold, 650ns Acquisiton Time, Precision |
Intersil |
| 33 |
HMPSA13 |
NPN SILICON DARLINGTON TRASNSITOR |
Hi-Sincerity Microelectronics |
| 34 |
MCR100 |
Resistors > Rectangular Chip resistors Low ohmic resisitors : MCR10, etc. |
ROHM |
| 35 |
MCR18 |
Resistors > Rectangular Chip resistors Low ohmic resisitors : MCR10, etc. |
ROHM |
| 36 |
MCR25 |
Resistors > Rectangular Chip resistors Low ohmic resisitors : MCR10, etc. |
ROHM |
| 37 |
MCR50 |
Resistors > Rectangular Chip resistors Low ohmic resisitors : MCR10, etc. |
ROHM |
| 38 |
MJ14001 |
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
Motorola |
| 39 |
MJ14002 |
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
Motorola |
| 40 |
MJ14003 |
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
Motorola |
| 41 |
MMT3960A |
RF AND HIGH-SPEED SWITCHING TRANSSITOR |
Motorola |
| 42 |
MTW4N80 |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
| 43 |
MTW4N80E |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
| 44 |
NDS355N_NF40 |
N-Channel Logic Level Enhancement Mode Field Effect Transisitor |
Fairchild Semiconductor |
| 45 |
RSF05G1-1P |
THYRISITOR SILICON PLANAR TYPE LOW POWER SWITCHING AND CONTROL APPLICATIONS |
TOSHIBA |
| 46 |
RSF05G1-3P |
THYRISITOR SILICON PLANAR TYPE LOW POWER SWITCHING AND CONTROL APPLICATIONS |
TOSHIBA |
| 47 |
RSF05G1-5P |
THYRISITOR SILICON PLANAR TYPE LOW POWER SWITCHING AND CONTROL APPLICATIONS |
TOSHIBA |
| 48 |
ST68 |
PNP General Purpose Tranisitor |
ROHM |
| | | |
