| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2SK407 |
Low noise Ku-K band GaAs MESFET for HI REL applications only (This datasheet of NE67383 is also the datasheet of 2SK407, see the Electrical Characteristics table) |
NEC |
| 32 |
2SK4072 |
Silicon N-channel MOSFET |
Panasonic |
| 33 |
2SK408 |
SILICON N CHANNEL MOS FET |
Hitachi Semiconductor |
| 34 |
2SK4083 |
Silicon N-channel junction FET |
Panasonic |
| 35 |
2SK4083G |
Silicon N-channel junction FET |
Panasonic |
| 36 |
2SK4085LS |
N-Channel Power MOSFET, 500V, 16A, 430mOhm, TO-220F-3FS |
ON Semiconductor |
| 37 |
2SK4088LS |
Power MOSFET 650V 11A 0.85 Ohm Nch Single TO-220F-3FS |
ON Semiconductor |
| 38 |
2SK4089LS |
Power MOSFET 650 V, 12 A, 720 mOhm Single N-Channel TO-220FL(LS) |
ON Semiconductor |
| 39 |
2SK409 |
SILICON N CHANNEL MOS FET |
Hitachi Semiconductor |
| 40 |
2SK4099LS |
Power MOSFET 600V 8.5A 0.94 Ohm Nch Single TO-220F-3FS |
ON Semiconductor |
| 41 |
DGSK40-015A |
150V gallium arsenide schottky rectifier |
IXYS |
| 42 |
DGSK40-018A |
180V gallium arsenide schottky rectifier |
IXYS |
| 43 |
DGSK40-022A |
220V gallium arsenide schottky rectifier |
IXYS |
| 44 |
DGSK40-025A |
250V gallium arsenide schottky rectifier |
IXYS |
| 45 |
DSF8045SK40 |
Fast Recovery Diode |
Dynex Semiconductor |
| 46 |
DSSK40-0015B |
Silicon Schottky Diodes |
IXYS |
| 47 |
DSSK40-004B |
60V power schottky rectifier with common cathode |
IXYS |
| 48 |
DSSK40-006B |
Silicon Schottky Diodes |
IXYS |
| 49 |
DSSK40-008B |
Silicon Schottky Diodes |
IXYS |
| 50 |
DSSK40-008B |
Power Schottky Rectifier with common cathode |
IXYS Corporation |
| 51 |
OSK40-1200 |
Three Phase Bridge |
Mullard |
| 52 |
OSK40-300 |
Three Phase Bridge |
Mullard |
| 53 |
OSK40-600 |
Three Phase Bridge |
Mullard |
| 54 |
OSK40-900 |
Three Phase Bridge |
Mullard |
| 55 |
OSK400-1200 |
Three Phase Bridge |
Mullard |
| 56 |
OSK400-300 |
Three Phase Bridge |
Mullard |
| 57 |
OSK400-600 |
Three Phase Bridge |
Mullard |
| 58 |
OSK400-900 |
Three Phase Bridge |
Mullard |
| | | |
