| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N6155AUS |
Diode TVS Single Bi-Dir 27.4V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 32 |
1N6159US |
Diode TVS Single Bi-Dir 38.8V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 33 |
1N6160AUS |
Diode TVS Single Bi-Dir 42.6V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 34 |
1N6161US |
Diode TVS Single Bi-Dir 47.1V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 35 |
1N6170US |
Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 36 |
1N6173US |
Diode TVS Single Bi-Dir 152V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 37 |
1N914UR-1 |
MINI-MELF-SMD Silicon Swithching Diode |
Microsemi |
| 38 |
20CLQ045 |
20A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package |
International Rectifier |
| 39 |
23Z247SMD |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
| 40 |
24IMS6-05-9 |
6 Watt SMD and through hole DC/DC converters |
Power-One |
| 41 |
24IMS6-0505-9 |
6 Watt SMD and through hole DC/DC converters |
Power-One |
| 42 |
24IMS6-12-9 |
6 Watt SMD and through hole DC/DC converters |
Power-One |
| 43 |
24IMS6-1212-9 |
6 Watt SMD and through hole DC/DC converters |
Power-One |
| 44 |
24IMS6-15-9 |
6 Watt SMD and through hole DC/DC converters |
Power-One |
| 45 |
24IMS6-1515-9 |
6 Watt SMD and through hole DC/DC converters |
Power-One |
| 46 |
2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS |
SemeLAB |
| 47 |
2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor |
SemeLAB |
| 48 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
| 49 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 50 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 51 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 52 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 53 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
| 54 |
2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 |
Isahaya Electronics Corporation |
| 55 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
| 56 |
2SC4154 |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 57 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
| 58 |
2SC4357 |
500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. |
Isahaya Electronics Corporation |
| 59 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
| 60 |
2SC5383 |
125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
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