No. |
Part Name |
Description |
Manufacturer |
31 |
STD131 ASIC |
Low Power Memories |
Samsung Electronic |
32 |
STD131 ASIC |
I/O Cells |
Samsung Electronic |
33 |
STD131 ASIC |
PLL 2073X |
Samsung Electronic |
34 |
STD131 ASIC |
I/O& I/O IP Overview |
Samsung Electronic |
35 |
STD131 ASIC |
Primitive Miscellanies |
Samsung Electronic |
36 |
STD131 ASIC |
Equivalent standard load for layers |
Samsung Electronic |
37 |
STD131 ASIC |
STD130 Brochure |
Samsung Electronic |
38 |
STD131 ASIC |
STD130 Brochure |
Samsung Electronic |
39 |
STD131 ASIC |
Glossary of analog terms |
Samsung Electronic |
40 |
STD131 ASIC |
High Density Memories |
Samsung Electronic |
41 |
STD131 ASIC |
Book Contents |
Samsung Electronic |
42 |
STD131 ASIC |
I/O IP Cells |
Samsung Electronic |
43 |
STD131 ASIC |
Primitive Overview |
Samsung Electronic |
44 |
STD131 ASIC |
Primitive Logic Cells |
Samsung Electronic |
45 |
STD13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
46 |
STD13NM60N |
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package |
ST Microelectronics |
47 |
STD13NM60ND |
N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package |
ST Microelectronics |
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