No. |
Part Name |
Description |
Manufacturer |
31 |
DME150-3 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
32 |
DME500 |
500 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
33 |
DME500-2 |
500 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
34 |
DME500-3 |
500 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
35 |
DMEG250 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
36 |
DMEG250-2 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
37 |
DMEG250-3 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
38 |
EFD027 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
39 |
EFD060 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
40 |
EFD104 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
41 |
EFD106 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
42 |
EFD107 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
43 |
EFD108 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
44 |
EFD110 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
45 |
EFD111 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
46 |
EFD112 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
47 |
EFD115 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
48 |
FS36 |
Tungsten point contact germanium diode - switching |
SESCOSEM |
49 |
M1173 |
64 PATTERN VISION PERSISTENCE |
MOSDESIGN SEMICONDUCTOR CORP |
50 |
PLATINUM - TUNGSTEN ALLOY STRAIN GAGES |
Transducer-Class® Strain Gages |
Vishay |
51 |
QPF7221 |
2.4 GHz Wi-Fi Front End Module with integrated Coexistence BAW |
Qorvo |
52 |
QPQ1907 |
2.4 GHz Long-Term Evolution Co- Existence BAW Filter |
Qorvo |
53 |
SFD104 |
Tungsten point contact germanium diode - video detection |
SESCOSEM |
54 |
SFD105 |
Tungsten point contact germanium diode - switching |
SESCOSEM |
55 |
SFD106 |
Tungsten point contact germanium diode - video detection |
SESCOSEM |
56 |
SFD107 |
Tungsten point contact germanium diode - detection |
SESCOSEM |
57 |
SFD108 |
Tungsten point contact germanium diode - general purpose |
SESCOSEM |
58 |
SFM101 |
Tungsten point contact germanium diodes assemblies, function doubler |
SESCOSEM |
59 |
SFM102 |
Tungsten point contact germanium diodes assemblies, function center tap rectifier positive output |
SESCOSEM |
60 |
SFM103 |
Tungsten point contact germanium diodes assemblies, function center tap rectifier negative output |
SESCOSEM |
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