No. |
Part Name |
Description |
Manufacturer |
31 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
32 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
33 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
34 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
35 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
36 |
2N1990 |
NPN silicon transistor designed for driving neon display tubes |
Motorola |
37 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
38 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
39 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
40 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
41 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
42 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
43 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
44 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
45 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
46 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
47 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
48 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
49 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
50 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
51 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
52 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
53 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
54 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
55 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
56 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
57 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
58 |
2N2848 |
NPN silicon annular transistor designed for switching applications |
Motorola |
59 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
60 |
2N2894 |
PNP silicon annular transistor designed for switching applications |
Motorola |
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