| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AD9945KCPRL7 |
Complete 12-Bit 40 MHz CCD Signal Processor |
Analog Devices |
| 32 |
AD9945KCPZ2 |
Complete 12-Bit 40 MHz CCD Signal Processor |
Analog Devices |
| 33 |
AD9945KCPZRL72 |
Complete 12-Bit 40 MHz CCD Signal Processor |
Analog Devices |
| 34 |
AQV216SX |
PhotoMOS relay, GU (general use) type [1-channel (form A ) type]. Output rating: load voltage 600 V, load current 40 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 35 |
AQV216SZ |
PhotoMOS relay, GU (general use) type [1-channel (form A ) type]. Output rating: load voltage 600 V, load current 40 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 36 |
AQW216 |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Through hole terminal. Tube packing style. |
Matsushita Electric Works(Nais) |
| 37 |
AQW216A |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Surface-mount terminal. Tube packing style. |
Matsushita Electric Works(Nais) |
| 38 |
AQW216AX |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Surface-mount terminal. Tape and reel packing style. |
Matsushita Electric Works(Nais) |
| 39 |
AQW216AZ |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 60 V, load current 40 mA. Surface-mount terminal. Tape and reel packing style. |
Matsushita Electric Works(Nais) |
| 40 |
AQW224NA |
PhotoMOS relay, FR (radio frequency) type, [2-channel (form A) type] low on resistance. AC/DC type. Output rating: load voltage 400 V, load current 40 mA. surface-mount terminal, tube packing style. |
Matsushita Electric Works(Nais) |
| 41 |
C1321 |
Channel photomultiplexer, 1/2 inche, window material MgF2, dark current 40 pA. |
PerkinElmer Optoelectronics |
| 42 |
C1322 |
Channel photomultiplexer, 1/2 inche, window material quartz, dark current 40 pA. |
PerkinElmer Optoelectronics |
| 43 |
FDD9409_F085 |
N-Channel PowerTrench� MOSFET 40 V, 90 A, 3.2 m? |
Fairchild Semiconductor |
| 44 |
MBR40H35PT |
Dual Schottky Barrier Rectifier, Forward Current 40 A |
Vishay |
| 45 |
MBR40H45PT |
Dual Schottky Barrier Rectifier, Forward Current 40 A |
Vishay |
| 46 |
MBR40H50PT |
Dual Schottky Barrier Rectifier, Forward Current 40 A |
Vishay |
| 47 |
MBR40H60PT |
Dual Schottky Barrier Rectifier, Forward Current 40 A |
Vishay |
| 48 |
MCT-40 |
Magnesium Calcium Titanate - Dielectric Constant 40 - 6.0 GHz |
Skyworks Solutions |
| 49 |
MTB40N10E |
TMOS POWER FET 40 AMPERES 100 VOLTS |
Motorola |
| 50 |
MTB40N10E |
Power MOSFET 40 Amps, 100 Volts |
ON Semiconductor |
| 51 |
MTB40N10E-D |
Power MOSFET 40 Amps, 100 Volts N-Channel D2PAK |
ON Semiconductor |
| 52 |
MTB40N10ET4 |
Power MOSFET 40 Amps, 100 Volts |
ON Semiconductor |
| 53 |
MTP40N10E |
TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM |
Motorola |
| 54 |
MTP40N10E |
Power MOSFET 40 Amps, 100 Volts |
ON Semiconductor |
| 55 |
MTP40N10E-D |
Power MOSFET 40 Amps, 100 Volts N-Channel TO-220 |
ON Semiconductor |
| 56 |
NID5004N |
Self-Protected FET with Temperature and Current Limit 40 V, 6.5 A, Single N-Channel, DPAK |
ON Semiconductor |
| 57 |
NVMFD5853N |
Power MOSFET 40 V, 10 mOhm, 53 A, Dual N−Channel SO-8FL |
ON Semiconductor |
| 58 |
NVMFS5832NL |
Power MOSFET 40 V, 4.2 mOhm, 120 A, Single N-Channel SO-8FL |
ON Semiconductor |
| 59 |
THS1240 |
12-BIT 40 MSPS IF SAMPLING COMMUNICATIONS ANALOG-TO-DIGITAL CONVERTER |
Texas Instruments |
| 60 |
THS1240CPHP |
12-BIT 40 MSPS IF SAMPLING COMMUNICATIONS ANALOG-TO-DIGITAL CONVERTER |
Texas Instruments |
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