No. |
Part Name |
Description |
Manufacturer |
31 |
2N2369A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
32 |
2N2483 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
33 |
2N2484 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
34 |
2N2904 |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
35 |
2N2904A |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
36 |
2N2905 |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
37 |
2N2905A |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
38 |
2N2906 |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
39 |
2N2906A |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
40 |
2N2907 |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
41 |
2N2907A |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
42 |
2N3053 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
43 |
2N3054 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
44 |
2N3055 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
45 |
2N3380 |
P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS |
New Jersey Semiconductor |
46 |
2N3382 |
P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS |
New Jersey Semiconductor |
47 |
2N3384 |
P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS |
New Jersey Semiconductor |
48 |
2N3386 |
P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS |
New Jersey Semiconductor |
49 |
2N404 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
50 |
2N5484 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
51 |
2N5485 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
52 |
2N5486 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
53 |
2N6106 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
54 |
2N6107 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
55 |
2N6108 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
56 |
2N6109 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
57 |
2N6110 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
58 |
2N6111 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
59 |
2N6288 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
60 |
2N6289 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
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