| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2SA1930 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 32 |
2SA1932 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 33 |
2SA1965 |
TRANSISTOR (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 34 |
2SA1967 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 35 |
2SA1968 |
High-Voltage Amp, High-Voltage Switching Applications |
SANYO |
| 36 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 37 |
2SA709 |
HIGH VOLTAGE AMPLIFIER |
USHA India LTD |
| 38 |
2SA817A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 39 |
2SA817A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 40 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 41 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 42 |
2SB1244 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 43 |
2SB1245 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 44 |
2SB646 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
Hitachi Semiconductor |
| 45 |
2SB646A |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
Hitachi Semiconductor |
| 46 |
2SB717 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
Hitachi Semiconductor |
| 47 |
2SB718 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
Hitachi Semiconductor |
| 48 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 49 |
2SC1166 |
Silicon NPN epitaxial planar transistor, driver stage amplifier applications, complementary to 2SA661 |
TOSHIBA |
| 50 |
2SC1514 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
| 51 |
2SC1615 |
High Voltage Amp. Triple Diffused Planar NPN Silicon Transistors |
ROHM |
| 52 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 53 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 54 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 55 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 56 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 57 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 58 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 59 |
2SC2235 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 60 |
2SC2278 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
| | | |
