No. |
Part Name |
Description |
Manufacturer |
31 |
EPM7064STC44-5 |
Programmable logic , 64 macrocells, 4 logic array blocks, 36 I/O pins, 5ns |
Altera Corporation |
32 |
EPM7064STC44-5F |
Programmable logic , 64 macrocells, 4 logic array blocks, 36 I/O pins, 5ns |
Altera Corporation |
33 |
EPM7064STC44-6 |
Programmable logic , 64 macrocells, 4 logic array blocks, 36 I/O pins, 6ns |
Altera Corporation |
34 |
EPM7064STC44-6F |
Programmable logic , 64 macrocells, 4 logic array blocks, 36 I/O pins, 6ns |
Altera Corporation |
35 |
EPM7064STC44-7 |
Programmable logic , 64 macrocells, 4 logic array blocks, 36 I/O pins, 7ns |
Altera Corporation |
36 |
EPM7064STC44-7F |
Programmable logic , 64 macrocells, 4 logic array blocks, 36 I/O pins, 7ns |
Altera Corporation |
37 |
EPM7064TC44-15 |
Programmable logic , 64 macrocells, 4 logic array blocks, 36 I/O pins, 15ns |
Altera Corporation |
38 |
EPM7064TC44-7 |
Programmable logic , 64 macrocells, 4 logic array blocks, 36 I/O pins, 7ns |
Altera Corporation |
39 |
ETC4-1 |
E-Series RF 1:4 Flux Coupled Step-up Transformer 1-350 MHz |
Tyco Electronics |
40 |
ETC4-1-2 |
E-Series RF 1:4 Flux Coupled Step-up Transformer 2.0 - 800 MHz |
Tyco Electronics |
41 |
ETC4-1-75 |
E-Series RF 1:4 Transformer 50 - 750 MHz |
Tyco Electronics |
42 |
ETC4-1-8 |
E-Series RF 1:4 Transformer 20 - 350 MHz |
Tyco Electronics |
43 |
ETC4-1T-3 |
E-Series RF 4:1 Transformer 1.5-600MHz |
Tyco Electronics |
44 |
ETC4-1T-7 |
E-Series RF 1:4 Transmission Line Step-up Transformer |
Tyco Electronics |
45 |
K4D261638E-TC40 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
46 |
K4D261638F-TC40 |
128Mbit GDDR SDRAM |
Samsung Electronic |
47 |
K4D28163HD-TC40 |
128Mbit DDR SDRAM |
Samsung Electronic |
48 |
K4D551638D-TC40 |
256Mbit GDDR SDRAM |
Samsung Electronic |
49 |
K4D551638D-TC45 |
256Mbit GDDR SDRAM |
Samsung Electronic |
50 |
K4D551638F-TC40 |
256Mbit GDDR SDRAM |
Samsung Electronic |
51 |
K4D64163HF-TC40 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
52 |
K4E641612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
53 |
K4E641612C-TC45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
54 |
K4E661612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
55 |
K4E661612C-TC45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
56 |
K4F641612B-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
57 |
K4F641612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
58 |
K4F661612B-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
59 |
K4F661612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
60 |
K4S643232E-TC45 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| | | |