No. |
Part Name |
Description |
Manufacturer |
31 |
NTD80N02 |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
32 |
NTD80N02-001 |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
33 |
NTD80N02-1G |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
34 |
NTD80N02-D |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
35 |
NTD80N02G |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
36 |
NTD80N02T4 |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
37 |
NTD80N02T4G |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
38 |
STD80 |
0.5 Micron STD80 Standard Cell Library Characteristics |
Samsung Electronic |
39 |
STD80 |
0.5 Micron STD80 Standard Cell Library Characteristics |
Samsung Electronic |
40 |
STD80 |
0.5 Micron STD80 Standard Cell Library Contents |
Samsung Electronic |
41 |
STD80 |
0.5 Micron STD80 Standard Cell Library Contents |
Samsung Electronic |
42 |
STD80 |
0.5 Micron STD80 Standard Cell Library Introduction |
Samsung Electronic |
43 |
STD80 |
0.5 Micron STD80 Standard Cell Library Introduction |
Samsung Electronic |
44 |
STD80N10F7 |
N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
45 |
STD80N4F6 |
Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
46 |
STD80N6F6 |
Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package |
ST Microelectronics |
47 |
TD8031AH |
8-Bit control-oriented microcontroller. Express. |
Intel |
48 |
TD8032AH |
8-Bit control-oriented microcontroller. Express. |
Intel |
49 |
TD8051AH |
8-Bit control-oriented microcontroller. Express. |
Intel |
50 |
TD8051AHP |
8-Bit control-oriented microcontroller. Express. |
Intel |
51 |
TD8052AH |
8-Bit control-oriented microcontroller. Express. |
Intel |
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