| No. |
Part Name |
Description |
Manufacturer |
| 31 |
DS26F32MJRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 32 |
DS26F32MW-QMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 33 |
DS26F32MWG/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 34 |
DS26F32MWGRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 35 |
DS26F32MWR-QML |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 36 |
DS26F32MWRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 37 |
HLMP-ED80-K0T00 |
HLMP-ED80-K0T00 · Radiometrically Tested AlInGaP II Led Lamps for Sensor-Based Applications |
Agilent (Hewlett-Packard) |
| 38 |
IMC-1210-100 |
Molded, Wirewound Inductor. Tested at 100KHz |
Vishay |
| 39 |
K1205 |
Protocol Tester |
Tektronix |
| 40 |
K1297 |
Protocol Tester |
Tektronix |
| 41 |
LM136AH-2.5-SMD |
2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5 |
National Semiconductor |
| 42 |
LM136AH-2.5RQML |
2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5 |
National Semiconductor |
| 43 |
LM136AH-2.5RQV |
2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5 |
National Semiconductor |
| 44 |
LM136H |
2.5V REFERENCE DIODE/ GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883/ METHOD 1019.5 |
National Semiconductor |
| 45 |
LMH6628J-QML |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 46 |
LMH6628J-QMLV |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 47 |
LMH6628JFQML |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 48 |
LMH6628JFQMLV |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 49 |
LMH6628WG-QML |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 50 |
LMH6628WG-QMLV |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 51 |
LMH6628WGFQML |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 52 |
LMH6628WGFQMLV |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 53 |
LMV227 |
Production RF Tested, RF Power Detector for CDMA and WCDMA |
National Semiconductor |
| 54 |
LMV227 |
Production RF Tested, RF Power Detector for CDMA and WCDMA |
Texas Instruments |
| 55 |
LMV227SD |
Production RF Tested, RF Power Detector for CDMA and WCDMA |
National Semiconductor |
| 56 |
LMV227SDX |
Production RF Tested, RF Power Detector for CDMA and WCDMA |
National Semiconductor |
| 57 |
MA43000 |
85-105 V, 0.333/2 GHz, high power circuit tested step recovery diode |
MA-Com |
| 58 |
MA43002 |
45-70 V, 2/6 GHz, high power circuit tested step recovery diode |
MA-Com |
| 59 |
MA43004 |
30-45 V, 3.3/13 GHz, high power circuit tested step recovery diode |
MA-Com |
| 60 |
MNDS26F32M-X-RH |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
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