| No. |
Part Name |
Description |
Manufacturer |
| 31 |
20ETF06STRL |
600V Fast Recovery Diode in a D2-Pak package |
International Rectifier |
| 32 |
20ETF06STRR |
600V Fast Recovery Diode in a D2-Pak package |
International Rectifier |
| 33 |
20ETF08 |
800V Fast Recovery Diode in a TO-220AC package |
International Rectifier |
| 34 |
20ETF08S |
800V Fast Recovery Diode in a D2-Pak package |
International Rectifier |
| 35 |
20ETF08STRL |
800V Fast Recovery Diode in a D2-Pak package |
International Rectifier |
| 36 |
20ETF08STRR |
800V Fast Recovery Diode in a D2-Pak package |
International Rectifier |
| 37 |
ACTF070013 |
70 MHz Standard Filter FOR base Station application |
etc |
| 38 |
ACTF070013-PK10 |
70 MHz Standard Filter FOR base Station application |
etc |
| 39 |
AOTF095A60L |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 40 |
BStF0440 |
Thyristor 600V |
Siemens |
| 41 |
BStF0446 |
Thyristor 700V |
Siemens |
| 42 |
BStF0455 |
Thyristor 800V |
Siemens |
| 43 |
BStF0460 |
Thyristor 900V |
Siemens |
| 44 |
BStF0466 |
Thyristor 1000V |
Siemens |
| 45 |
EYGTF0F0A05A |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - Graphite-PAD high thermal conductivity in z-direction |
Panasonic |
| 46 |
EYGTF0F0A10A |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - Graphite-PAD high thermal conductivity in z-direction |
Panasonic |
| 47 |
EYGTF0F0A15A |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - Graphite-PAD high thermal conductivity in z-direction |
Panasonic |
| 48 |
FK10 |
Heat sink for BStF04 and BStF25 series |
Siemens |
| 49 |
GK11 |
Heat sink for BStF04, BStF25 series |
Siemens |
| 50 |
GK12 |
Heat sink for BStF04, BStF25 series |
Siemens |
| 51 |
GK13 |
Heat sink for BStF04, BStF25 series |
Siemens |
| 52 |
HK10 |
Heat sink for BStF04, BStF25 |
Siemens |
| 53 |
PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
| 54 |
PTF080101S |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
| 55 |
PTF080451 |
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz |
Infineon |
| 56 |
PTF080451E |
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz |
Infineon |
| 57 |
PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
| 58 |
PTF080601A |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
| 59 |
PTF080601E |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
| 60 |
PTF080601F |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
| | | |
