| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ERJU1TF18R7U |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
| 32 |
IRKTF180-04HJ |
400V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
| 33 |
IRKTF180-04HK |
400V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
| 34 |
IRKTF180-08HJ |
800V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
| 35 |
IRKTF180-08HK |
800V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
| 36 |
IRKTF180-12HJ |
1200V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
| 37 |
IRKTF180-12HK |
1200V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
| 38 |
KDZVTF18B |
Zener Diode (corresponds to AEC-Q101) |
ROHM |
| 39 |
PTF180101 |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
| 40 |
PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
| 41 |
PTF180601 |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
| 42 |
PTF180601C |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
| 43 |
PTF180601E |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
| 44 |
PTF180901E |
GSM/EDGE RF Power FET |
Infineon |
| 45 |
PTF180901F |
GSM/EDGE RF Power FET |
Infineon |
| 46 |
PTF181301 |
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz |
Infineon |
| 47 |
PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz |
Infineon |
| 48 |
PTZTF18B |
Zener Diode (corresponds to AEC-Q101) |
ROHM |
| 49 |
STF18N55M5 |
N-channel 550 V, 0.150 Ohm, 16 A, MDmesh(TM) V Power MOSFET in TO-220FP package |
ST Microelectronics |
| 50 |
STF18N60M2 |
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 51 |
STF18N60M2(045Y) |
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP narrow leads package |
ST Microelectronics |
| 52 |
STF18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-220FP package |
ST Microelectronics |
| 53 |
STF18NM60N |
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP |
ST Microelectronics |
| 54 |
STF18NM60ND |
N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package |
ST Microelectronics |
| 55 |
STF18NM80 |
N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
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